Summary
- Researchers have developed a new approach to fabricate highly performing transistors based on 2D semiconductors
- The use of hexagonal boron nitride (h-BN) dielectrics and metal gate electrodes with high cohesive energy improves transistor performance
- Pt/h-BN gate stacks show 500-times lower leakage current than Au/h-BN gate stacks
- The research could lead to the development of reliable solid-state microelectronic circuits and devices